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• W2074987843 abstract "Polycrystalline silicon thin-film transistors (TFTs) have been fabricated by using a combined fast solid-phase crystallization (SPC) process followed by excimer laser annealing (ELA). The electrical characteristics of the devices, after post-hydrogenation, show average field effect mobilities > 100 cm2/Vs and better noise performance, if compared to conventional SPC-polysilicon TFTs. A main advantage of the presented technique is the reduced sensitivity of the device performances to the energy density used during ELA." @default.
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• W2074987843 date "1998-04-01" @default.
• W2074987843 modified "2023-09-27" @default.
• W2074987843 title "Combined Solid Phase Crystallization and Excimer Laser Annealing Process for Polysilicon Thin-Film Transistors" @default.
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• W2074987843 doi "https://doi.org/10.1002/(sici)1521-396x(199804)166:2<707::aid-pssa707>3.0.co;2-h" @default.
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