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• W2075061606 abstract "Abstract The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding to (001)GHO//(001)Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness (0.49 nm) and interface state density (7×1011 cm−2) were achieved from Au/Ti/GHO/Ge/Al capacitors." @default.
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• W2075061606 date "2013-11-01" @default.
• W2075061606 modified "2023-10-06" @default.
• W2075061606 title "Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer" @default.
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• W2075061606 doi "https://doi.org/10.1016/s1002-0721(12)60409-8" @default.
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