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• W2075268448 abstract "Ru top electrode etching techniques for (RTR) thin film capacitor fabrication were examined. A dry etching process using a plasma mixture of , , and Ar gases deteriorated the leakage current properties significantly, which were not recovered by postannealing processes. The surface roughness was not a critical factor in determining the leakage characteristics. The etching damage along the etched edges was not the main cause of the leakage degradation but it was observed over the entire area, which was confirmed according to a comparison of capacitors with different perimeter/area ratios. For the wet etching of Ru films, the etch rates were evaluated using a periodic acid solution at various concentrations at . The Ru films etched using a periodic acid solution showed a moderate etch rate and a reasonable etching selectivity on the and films. The as-wet-etched RTR capacitors showed a lower leakage current level than the dry-etched capacitors. Furthermore, the electrical properties of the wet-etched capacitor were improved significantly by a postannealing process." @default.
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• W2075268448 date "2011-01-01" @default.
• W2075268448 modified "2023-10-16" @default.
• W2075268448 title "Electrically Benign Ru Wet Etching Method for Fabricating Ru∕TiO[sub 2]∕Ru Capacitor" @default.
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• W2075268448 doi "https://doi.org/10.1149/1.3530789" @default.
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