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- W2075479622 abstract "The valence-band discontinuity, ΔEv, for heterojunctions formed bu growing GaAs on epitaxial Ge(110) layers has been observed to exhibit a continuous decrease with time for ≈100 h after interface formation. These new results are compared with previous measuremnts for heterojunctions formed by growing GaAs on sputter-annealed Ge(110) substrates. It is found that the magnitude of the ΔEv variations is observed for GaAS grown on both epitaxial Ge(110) layers and on Ge(110) substrates, it appears to be a characteristic feature of GaAs grown on Ge interface." @default.
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- W2075479622 date "1986-03-01" @default.
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- W2075479622 title "Heterojunction band discontinuities for GaAs grown on Ge(110): Time variation" @default.
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