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• W2075570090 abstract "Ge 3 Sb 2 Te 6 was analyzed in detail using an x-ray diffraction method. The crystal of this material in the space group R3¯m is characterized as a 33-layered cubic close-packed stacking structure. Te atoms fully occupy their specific layers, whereas Ge and Sb atoms are located in other layers thus causing partial atomic disordering. Te and Ge∕Sb layers are laminated alternately 11 times to form a NaCl block. Electron density distributions in the crystal were obtained using the maximum entropy method and band calculation, which showed very good agreement with each other. Ge3Sb2Te6 is a compound semiconductor with a very narrow band gap." @default.
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• W2075570090 date "2007-04-16" @default.
• W2075570090 modified "2023-09-25" @default.
• W2075570090 title "Structural investigation of Ge3Sb2Te6, an intermetallic compound in the GeTe–Sb2Te3 homologous series" @default.
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• W2075570090 doi "https://doi.org/10.1063/1.2728030" @default.
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