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- W2075596593 abstract "The incorporation of oxygen traces in chemical vapour deposited semiconductor silicon has been calculated for the temperature range of 1200–1500 K in dependence on the excess of hydrogen in the reaction gas. The results obtained correspond to the experimental data. With increasing temperatures of deposition and increasing excess of hydrogen the incorporation of oxygen decreases at a constant concentration of oxygen in the initial state. Der Einbau von Sauerstoffspuren in Halbleitersilicium während der Gasphasenabscheidung wurde im Temperaturbereich 1200–1500 K in Abhängigkeit vom Wasserstoffüberschuß im Reaktionsgas berechnet. Die erhaltenen Ergebnisse stehen mit experimentellen Befunden in Einklang. Mit steigender Abscheidungstemperatur und steigendem Wasserstoffüberschuß nimmt der Sauerstoffeinbau bei konstantem Sauerstoffgehalt im Ausgangszustand ab." @default.
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- W2075596593 date "1982-01-01" @default.
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- W2075596593 title "The incorporation of oxygen impurities in semiconductor silicon in chemical vapour deposition" @default.
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- W2075596593 doi "https://doi.org/10.1002/crat.2170170309" @default.
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