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- W2075603245 abstract "Abstract The formation process and electrical properties of delta-doped structures containing SiSb surface phases covered by epitaxial Si layers have been studied. The surface phases under consideration were the set of ordered surface phases on Si(111), namely, (√3 × √3) R 30°- Sb , (2 × 2)- Sb , (5√3 × 5√3) R 30°- Sb , and disordered Si(100)-Sb surface phases. The (√3 × √3) and (2 × 2) reconstructions have been found to be unstable with respect to room temperature Si deposition while the (5√3 × 5√3) R 30°- Sb surface phase preserves its structure. All buried surface phases on the Si(111) show the similar values of sheet carrier density (4.2 × 10 13 cm −2 ) and Hall mobility (180 cm 2 V −1 s −1 ). These parameters for the buried disordered Si(100)-Sb surface phases with 0.6–1.0 ML Sb are 1.2 × 10 14 cm −2 and 60 cm 2 V −1 s −1 , respectively." @default.
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- W2075603245 date "1992-06-01" @default.
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- W2075603245 title "Formation and electrical characterization of buried Si(111)-Sb and Si(100)-Sb surface phases" @default.
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- W2075603245 doi "https://doi.org/10.1016/0039-6028(92)90269-c" @default.
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