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- W2075847400 abstract "The bonding behavior of a low temperature direct wafer bonding process was studied for Si wafers with native oxide and Si wafers with thermal oxide. It was found that high bond strength could be achieved without annealing already at RT. Silicon bulk strength could be reached with annealing at 200°C." @default.
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- W2075847400 date "2012-05-01" @default.
- W2075847400 modified "2023-09-27" @default.
- W2075847400 title "Low temperature plasma activated direct wafer bonding" @default.
- W2075847400 doi "https://doi.org/10.1109/ltb-3d.2012.6238072" @default.
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