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• W2075936601 abstract "In the context of the alkali metal promotion of silicon oxidation, low pressure oxidation of potassium multilayers on cooled Si(111) has been investigated using XPS. Our measurements reveal that four potassium oxides (K2O, K2O2, KO2 and K2O3) are successively formed during increasing O2 exposure. Angular XPS analysis shows their relative depth distributions governed by the diffusion of oxygen atoms through the potassium overlayer. We observe strong indications suggesting that the potassium overlayer is characterized by the Stranski-Krastanov (SK) growth mode on Si(111) at 150 K. Surprisingly, potassium islands seem to be leveled under low pressure of oxygen." @default.
• W2075936601 created "2016-06-24" @default.
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• W2075936601 creator A5043538085 @default.
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• W2075936601 date "1995-05-01" @default.
• W2075936601 modified "2023-10-18" @default.
• W2075936601 title "X-ray photoelectron spectroscopic study of Si(111) oxidation promoted by potassium multilayers under low O2 pressures" @default.
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• W2075936601 doi "https://doi.org/10.1016/0368-2048(94)02287-9" @default.
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