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- W2075938513 abstract "Using band structure and total energy methods, we study the atomic and electronic structures of the polar (+c and − c plane) and nonpolar (a and m plane) surfaces of GaN and InN. We identify two distinct microscopic origins for Fermi-level pinning on GaN and InN, depending on surface stoichiometry and surface polarity. At moderate Ga/N ratios unoccupied gallium dangling bonds pin the Fermi level on n-type GaN at 0.5–0.7 eV below the conduction-band minimum. Under highly Ga-rich conditions metallic Ga adlayers lead to Fermi-level pinning at 1.8 eV above the valence-band maximum. We also explain the source of the intrinsic electron accumulation that has been universally observed on polar InN surfaces. It is caused by In-In bonds leading to occupied surface states above the conduction-band minimum. We predict that such a charge accumulation will be absent on the nonpolar surfaces of InN, when prepared under specific conditions." @default.
- W2075938513 created "2016-06-24" @default.
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- W2075938513 date "2006-10-01" @default.
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- W2075938513 title "Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces" @default.
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- W2075938513 doi "https://doi.org/10.1209/epl/i2006-10250-2" @default.
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