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- W2076007071 abstract "Discrete current fluctuations before and after breakdown have been observed in InP MIS tunnel diodes with 30–50Å thick InP native oxide. It is proposed that breakdown produces additional oxide defects in localized regions and that the current flow through these sites is modulated by the action of defects." @default.
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- W2076007071 date "1993-08-01" @default.
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- W2076007071 title "Discrete current fluctuations in InP MIS structures due to defects created by breakdown degradation in InP native oxide" @default.
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- W2076007071 doi "https://doi.org/10.1016/0167-9317(93)90143-s" @default.
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