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• W2076018041 abstract "Thin film reactions of Cu/Al multilayer films were investigated by differential scanning calorimetry and transmission electron microscopy. Sequential intermetallic compound formation was found in the temperature range from 300 to 620 K. With excess copper present in the as-deposited trilayer and multilayer films, the observed sequence was CuAl2 and Cu9Al4, and the interfacial reactions were controlled by interfacial and grain boundary diffusion. The activation energies for the formation of CuAl2 and Cu9Al4 are 0.78±0.11 and 0.83±0.2 eV, respectively." @default.
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• W2076018041 date "1993-11-15" @default.
• W2076018041 modified "2023-10-18" @default.
• W2076018041 title "Interfacial reactions on annealing Cu/Al multilayer thin films" @default.
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• W2076018041 doi "https://doi.org/10.1063/1.355183" @default.
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