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- W2076048661 abstract "In this paper, we have developed a compact analytical model for the drain current of a silicon-on-insulator tunneling field-effect transistor. The model includes the effects of oxide thickness, body doping, drain voltage, and gate metal work function. The model calculates the drain current using a tangent line approximation method to integrate the tunneling generation rate in the source-body depletion region. The accuracy of the model is tested against 2-D numerical simulations. The model predicts the drain current accurately in both the ON state (strong inversion) as well as in the subthreshold region." @default.
- W2076048661 created "2016-06-24" @default.
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- W2076048661 date "2015-02-01" @default.
- W2076048661 modified "2023-10-18" @default.
- W2076048661 title "An Accurate Compact Analytical Model for the Drain Current of a TFET From Subthreshold to Strong Inversion" @default.
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- W2076048661 doi "https://doi.org/10.1109/ted.2014.2381560" @default.
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