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• W2076112488 abstract "The oxidation of the basal plane of zinc has been observed to have several distinct stages in a study using Auger electron spectroscopy and low-energy electron diffraction. For oxygen pressures between 10−8 and 10−6 Torr and substrate temperatures between liquid N2 temperature and 425°K, the first stage of the oxide growth is described by a substrate temperature independent, linear rate law: dxdt = k0P, where x is the film thickness, P is the oxygen pressure and k0 is a constant with a magnitude of about 10−3 cm/Torr·sec. The first stage of growth stops after an exposure of about 8×10−5 Torr·sec after an oxide film several monolayers thick has formed. For T 300°K, the oxide film is an epitaxial single crystal with lattice constant parallel to the Zn substrate and equal to that of bulk zinc oxide. For T 250°K, no long range order was observed. Mechanisms which are consistent with the observed growth kinetics are discussed." @default.
• W2076112488 created "2016-06-24" @default.
• W2076112488 creator A5012718064 @default.
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• W2076112488 date "1976-05-01" @default.
• W2076112488 modified "2023-09-27" @default.
• W2076112488 title "The oxidation of Zn(0001): The first stage" @default.
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• W2076112488 doi "https://doi.org/10.1016/0021-9797(76)90040-0" @default.
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