Matches in SemOpenAlex for { <https://semopenalex.org/work/W2076127759> ?p ?o ?g. }
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87
with 100 items per page.
- W2076127759 endingPage "41" @default.
- W2076127759 startingPage "30" @default.
- W2076127759 abstract "ABSTRACT Gallium and arsenic doped ZnO thin films (0.1 at.%) were deposited at different temperatures by using pulsed laser deposition technique. An x-ray diffractometer was used to investigate the structural properties of the thin films. It is found that the thin films have a preferred (002) orientation, and the peak intensity of the (002) orientation increases with increasing growth temperature. Atomic force microscope was used to investigate the surface morphologies of the thin films. The grain size and roughness of the thin films depend on the growth temperature. A spectrophotometer was used to measure the transmittances of the thin films. The band gap energies of the thin films were calculated by linear fitting the sharp absorption edge of high-quality thin films. It is found that, the band gap energies of gallium and arsenic co-doped ZnO thin films are larger than the pure ZnO due to Burstein-Moss effect, and the band gap energy decreases with increasing growth temperature. A spectrometer was used to investigate the luminescent properties of the thin films. All of the thin films show near band edge emission and no deep-level emissions are observed. This is believed to be the compensation of the oxygen vacancies. Hall measurements indicate that all the thin films are n-type semiconductor and the doped thin film grown at 400°C is the most conductive and has the highest mobility." @default.
- W2076127759 created "2016-06-24" @default.
- W2076127759 creator A5001741070 @default.
- W2076127759 creator A5005008036 @default.
- W2076127759 creator A5022336731 @default.
- W2076127759 creator A5050718068 @default.
- W2076127759 creator A5076715988 @default.
- W2076127759 date "2007-04-19" @default.
- W2076127759 modified "2023-09-26" @default.
- W2076127759 title "CHARACTERIZATIONS OF GALLIUM AND ARSENIC CO-DOPED ZnO THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION TECHNIQUE" @default.
- W2076127759 cites W1971738258 @default.
- W2076127759 cites W1977372179 @default.
- W2076127759 cites W1982352152 @default.
- W2076127759 cites W1984337837 @default.
- W2076127759 cites W1997119421 @default.
- W2076127759 cites W1997800987 @default.
- W2076127759 cites W2006486843 @default.
- W2076127759 cites W2034701750 @default.
- W2076127759 cites W2062189264 @default.
- W2076127759 cites W2085199238 @default.
- W2076127759 cites W2088294258 @default.
- W2076127759 cites W2090166310 @default.
- W2076127759 cites W2260315481 @default.
- W2076127759 doi "https://doi.org/10.1080/10584580601099090" @default.
- W2076127759 hasPublicationYear "2007" @default.
- W2076127759 type Work @default.
- W2076127759 sameAs 2076127759 @default.
- W2076127759 citedByCount "0" @default.
- W2076127759 crossrefType "journal-article" @default.
- W2076127759 hasAuthorship W2076127759A5001741070 @default.
- W2076127759 hasAuthorship W2076127759A5005008036 @default.
- W2076127759 hasAuthorship W2076127759A5022336731 @default.
- W2076127759 hasAuthorship W2076127759A5050718068 @default.
- W2076127759 hasAuthorship W2076127759A5076715988 @default.
- W2076127759 hasConcept C113196181 @default.
- W2076127759 hasConcept C159985019 @default.
- W2076127759 hasConcept C171250308 @default.
- W2076127759 hasConcept C181966813 @default.
- W2076127759 hasConcept C185592680 @default.
- W2076127759 hasConcept C19067145 @default.
- W2076127759 hasConcept C191897082 @default.
- W2076127759 hasConcept C192562407 @default.
- W2076127759 hasConcept C26771246 @default.
- W2076127759 hasConcept C37982897 @default.
- W2076127759 hasConcept C39546656 @default.
- W2076127759 hasConcept C43617362 @default.
- W2076127759 hasConcept C49040817 @default.
- W2076127759 hasConcept C550372918 @default.
- W2076127759 hasConcept C57863236 @default.
- W2076127759 hasConcept C85080765 @default.
- W2076127759 hasConceptScore W2076127759C113196181 @default.
- W2076127759 hasConceptScore W2076127759C159985019 @default.
- W2076127759 hasConceptScore W2076127759C171250308 @default.
- W2076127759 hasConceptScore W2076127759C181966813 @default.
- W2076127759 hasConceptScore W2076127759C185592680 @default.
- W2076127759 hasConceptScore W2076127759C19067145 @default.
- W2076127759 hasConceptScore W2076127759C191897082 @default.
- W2076127759 hasConceptScore W2076127759C192562407 @default.
- W2076127759 hasConceptScore W2076127759C26771246 @default.
- W2076127759 hasConceptScore W2076127759C37982897 @default.
- W2076127759 hasConceptScore W2076127759C39546656 @default.
- W2076127759 hasConceptScore W2076127759C43617362 @default.
- W2076127759 hasConceptScore W2076127759C49040817 @default.
- W2076127759 hasConceptScore W2076127759C550372918 @default.
- W2076127759 hasConceptScore W2076127759C57863236 @default.
- W2076127759 hasConceptScore W2076127759C85080765 @default.
- W2076127759 hasIssue "1" @default.
- W2076127759 hasLocation W20761277591 @default.
- W2076127759 hasOpenAccess W2076127759 @default.
- W2076127759 hasPrimaryLocation W20761277591 @default.
- W2076127759 hasRelatedWork W2003732740 @default.
- W2076127759 hasRelatedWork W2014084206 @default.
- W2076127759 hasRelatedWork W2076127759 @default.
- W2076127759 hasRelatedWork W2083842801 @default.
- W2076127759 hasRelatedWork W2181601264 @default.
- W2076127759 hasRelatedWork W2182390184 @default.
- W2076127759 hasRelatedWork W2237108632 @default.
- W2076127759 hasRelatedWork W2249892488 @default.
- W2076127759 hasRelatedWork W2316841205 @default.
- W2076127759 hasRelatedWork W2181925272 @default.
- W2076127759 hasVolume "90" @default.
- W2076127759 isParatext "false" @default.
- W2076127759 isRetracted "false" @default.
- W2076127759 magId "2076127759" @default.
- W2076127759 workType "article" @default.