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- W2076133577 abstract "We have experimentally studied the electron velocity behavior of single source heterojunction metal–oxide–semiconductor field-effect transistor (SHOTs) without a drain energy spike fabricated by optimizing the source heterostructures. The electron velocity v E of SHOTs with source conduction band offset Δ E C strongly depends on the source heterojunction position, and the enhancement of v E for SHOTs relative to that for single drain-heterojunction transistors (DHOTs) and strained-Si-on-insulator devices (SSOIs) slightly increases with decreasing lattice temperature T . We have also found that v E for SHOTs, DHOTs, and SSOIs has a power law dependence on low-field electron mobility µ EFF , that is, the mean free path of electrons λ at various T . Thus, the electron kinetic energy Δ E K converted by the source band offset in SHOTs increases with increasing mean free path of electrons at lower T . Using v E ∝λ α (α: constant), we can also estimate v E for both SHOTs and DHOTs at the ballistic transport limit." @default.
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- W2076133577 date "2011-01-01" @default.
- W2076133577 modified "2023-10-03" @default.
- W2076133577 title "Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature" @default.
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- W2076133577 doi "https://doi.org/10.1143/jjap.50.010107" @default.
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