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- W2076174953 abstract "We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski–Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations." @default.
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- W2076174953 date "2002-04-01" @default.
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- W2076174953 title "First principles and macroscopic theories of semiconductor epitaxial growth" @default.
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