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• W2076179877 abstract "Thin films of ZrO2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior." @default.
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• W2076179877 date "2007-10-01" @default.
• W2076179877 modified "2023-10-16" @default.
• W2076179877 title "Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering" @default.
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• W2076179877 doi "https://doi.org/10.1016/j.physb.2007.05.022" @default.
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