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- W2076179924 abstract "cBN/Si n–p heterojunctions have been fabricated and characterized. n-type cBN films were grown on p-type Si wafers using RF reactive sputter, and the n-type cBN films were obtained by adding S (sulfur) into working gas. The I–V (current–voltage) characteristics have obvious rectification. The fitting results show that the current transporting model for the cBN/Si n–p heterojunctions is the same as Anderson’s transporting model. The C–V (capacitance–voltage) characteristics are close to that of ideal heterojunctions. The built-in potential in the cBN/Si n–p heterojunctions was determined from C–V measurements at 4.71 V. The dopant concentration in the n-type cBN films was also determined from the C–V measurements at 6.50 × 1014/cm3." @default.
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- W2076179924 date "2011-07-01" @default.
- W2076179924 modified "2023-10-17" @default.
- W2076179924 title "Deposition and electrical characteristics of S-doped boron nitride thin films" @default.
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- W2076179924 doi "https://doi.org/10.1016/j.vacuum.2011.04.011" @default.
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