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• W2076258375 abstract "Indium nitride was grown on Al2O3 substrate and characterized by x-ray diffraction, Raman, electrical resistivity, Hall, and magnetoresistance studies. Thermoelectric and electrical properties of free-standing films were measured in situ under high pressure (HP) cycling to 20 GPa, across a phase transformation to a rock-salt-structured lattice. HP-cycling-induced amorphization was established. The thermopower (Seebeck effect) data evidence that both crystalline and amorphous InN kept n-type conductivity to 20 GPa. Pressure effect on the carrier concentration and effective mass is analyzed. Two features that can be related to structural transitions in amorphous InN were found near 11 and 17 GPa." @default.
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• W2076258375 date "2010-07-19" @default.
• W2076258375 modified "2023-10-17" @default.
• W2076258375 title "Pressure cycling of InN to 20 GPa: <i>In situ</i> transport properties and amorphization" @default.
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• W2076258375 doi "https://doi.org/10.1063/1.3466913" @default.
• W2076258375 hasPublicationYear "2010" @default.
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