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- W2076279173 abstract "A study of the liquid phase epitaxial growth of InxGa1−xAs (x = 0.06) layers on different types of patterned GaAs(100) substrates has been carried out. The dependence of growth morphology on the stripe orientation of the star patterned trench substrate has been observed. Pyramid layers were grown in the stripes oriented along the ⟨001⟩ direction. Broken tent structures formed along the ⟨012⟩ direction. Pyramidal structured layers looked to grow faster than the tent-like and broken tent-like structures. In order to analyse the hollow pyramid structure growth in detail, they were grown on circular trench substrates for different periods of time. Hollow pyramidal structures of InGaAs have been grown on circular patterned trench substrates. Effective defect filtration can be realized in this kind of growth of hollow pyramidal structures. The formation mechanism of the hollow pyramid structured layers has been studied in detail." @default.
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- W2076279173 date "2002-06-18" @default.
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- W2076279173 title "Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE" @default.
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- W2076279173 doi "https://doi.org/10.1088/0268-1242/17/7/316" @default.
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