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• W2076281567 abstract "Two-color InGaN/GaN micro-facet multiple-quantum well (MQW) samples grown on 4 in. Si (111) substrate were systematically characterized. The micro-facet structure was achieved by epitaxial lateral overgrowth on SiO2 masked GaN surfaces with stripes along the 〈11¯00〉 direction and composed of (0001) and (112¯2) facets. Two different emission peaks stemming from (0001) and (112¯2) oriented MQWs are observed by photoluminescence. The relative intensities of the two peaks can be tuned by controlling the structure’s geometry and the experimentally derived growth rates on the different facets. For each facet, we have also determined the MQWs’ optical properties, the polarization, the internal quantum efficiency, and the light extraction efficiency. In addition, we analyzed the blue shift for differently oriented MQWs as function of temperature and excitation power." @default.
• W2076281567 created "2016-06-24" @default.
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• W2076281567 date "2011-10-15" @default.
• W2076281567 modified "2023-09-23" @default.
• W2076281567 title "Two-color InGaN/GaN microfacet multiple-quantum well structures grown on Si substrate" @default.
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• W2076281567 doi "https://doi.org/10.1063/1.3653831" @default.
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