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• W2076285904 abstract "A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field." @default.
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• W2076285904 date "2010-06-14" @default.
• W2076285904 modified "2023-10-05" @default.
• W2076285904 title "Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor" @default.
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• W2076285904 doi "https://doi.org/10.1063/1.3453870" @default.
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