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• W2076289330 abstract "The optimization of plasma-enhanced chemical-vapour-deposited amorphous SiNxHy (a-SixHy) layers for thin film diode (TFD) application in active matrix liquid crystal displays is discussed. The layers are deposited from SiH4N2 and SiH4N2H2 gas mixtures and the flow dependence of the deposition rate is an important reactor characteristic. In comparison with undiluted growth the flow dependence of the deposition rate for hydrogen-diluted growth is relatively weak over a wide flow range. Also, in the case of hydrogen dilution the achieved uniformity of both the a-SiNxHy layer thickness and the a-SiNxHy optical gap is higher. The uniformity of the a-SiNxHy layer properties correlates with the uniformity of the TFD I–V characteristic, and for a-SiNxHy with an optical gap of 2.10 eV the uniformity of the I–V characteristic improves markedly with hydrogen dilution. Finally, the possibility of obtaining a selected a-SiNxHy optical gap for several compositions is discussed and a correlation between the hydrogen content of the a-SiNxHy and the TFD stability is noted." @default.
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• W2076289330 date "1994-04-01" @default.
• W2076289330 modified "2023-10-18" @default.
• W2076289330 title "Plasma-enhanced chemical vapour deposition of amorphous silicon nitride for thin film diode active matrix liquid crystal displays" @default.
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• W2076289330 doi "https://doi.org/10.1016/0040-6090(94)90443-x" @default.
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