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• W2076294858 abstract "3C–SiC grown on n-type Si wafers by chemical vapor deposition (CVD) was anodized in a HF–ethanol solution. Positron annihilation Doppler broadening and lifetime measurements were carried out to characterize a porous structure formed in the SiC layer. In contrast to the case of porous Si, for which long-lived components with lifetimes 5–30 ns have been reported (Suzuki et al., 1994), a lifetime longer than 1 ns was not observed for the porous SiC. We discuss chemical effect in the pore surface based on the Doppler broadening spectrum in the high momentum region." @default.
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• W2076294858 date "2000-06-01" @default.
• W2076294858 modified "2023-10-01" @default.
• W2076294858 title "Characterization of porous SiC by variable-energy positron beams" @default.
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• W2076294858 doi "https://doi.org/10.1016/s0969-806x(00)00229-2" @default.
• W2076294858 hasPublicationYear "2000" @default.
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