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- W2076295086 abstract "As one of the semiconductor-metal eutectic (SME) composites, Si-TaSi2 eutectic composite has many characters such as the high melting point of TaSi2 material, the large density of TaSi2 fibers incorporated into the Si matrix, three-dimensional array of Schottky junctions grown in the composite spontaneously. So it is an ideal candidate for field emission array cathodes. In this paper, the directionally solidified Si-TaSi2 eutectic in situ composite for field emission is prepared by means of the electron beam floating zone melting (EBFZM) technique on the basis of Czochralski (CZ) method. The Si-TaSi2 eutectic in situ composite, which has high-aligned and uniformly distributed TaSi2 fibers in the Si matrix, can be obtained when the solidification rate changes from 0.3 to 9.0 mm/min. As the solidification rate is increased, both the fibers’ diameter and inter-rod spacing are decreased, while the fibers’ density and the volume fraction are increased. Moreover, the transition from a planar interface to cellular interface and then to planar interface morphologies with increasing velocity is observed with the zero power method." @default.
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- W2076295086 date "2007-02-01" @default.
- W2076295086 modified "2023-09-27" @default.
- W2076295086 title "Microstructure characteristics and interface morphology evolvement of Si-TaSi2 eutectic in situ composite for field emission" @default.
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- W2076295086 doi "https://doi.org/10.1016/j.jcrysgro.2006.11.248" @default.
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