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- W2076295987 abstract "In this article, the authors propose an improved approach—separation by implanted oxygen (SIMOX) layer transfer process—to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding technique and etch-stop thinning process. Spectroscopic ellipsometry indicated a thin-film SOI with the device layer of 147.5±3.1nm. An atomic-scale sharp interface between the device layer and buried oxide layer was observed by high-resolution transmission electron microscopy." @default.
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- W2076295987 date "2008-11-01" @default.
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- W2076295987 title "Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer" @default.
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- W2076295987 doi "https://doi.org/10.1116/1.2990785" @default.
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