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- W2076350060 abstract "This work presents a new type of polarization-free GaN emitter. The unique aspect of this work is that the ultraviolet andvisible emission originates from the cubic phase GaN and the cubic phase InGaN/GaN multi-quantum-wells,respectively. Conventionally, GaN emitters (e.g. light emitting diodes, laser diodes) are wurtzite phase thus strongpolarization fields exist across the structure contributing to the “droop” behavior – a phenomenon defined as “thereduction in emitter efficiency as injection current increases”. The elimination of piezoelectric fields in GaN-basedemitters as proposed in this work provide the potential for achieving a 100% internal efficiency and might lead to droopfreelight emitting diodes. In addition, this work demonstrates co-integration of GaN emitters on cheap and scalableCMOS-compatible Si (100) substrate, which yields possibility of realizing a GaN laser diode uniquely – via formingmirrors along the naturally occurring cubic phase GaN-Si(100) cleavage planes." @default.
- W2076350060 created "2016-06-24" @default.
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- W2076350060 date "2015-02-08" @default.
- W2076350060 modified "2023-09-22" @default.
- W2076350060 title "Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)" @default.
- W2076350060 cites W2032345898 @default.
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- W2076350060 doi "https://doi.org/10.1117/12.2082894" @default.
- W2076350060 hasPublicationYear "2015" @default.
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