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- W2076366991 abstract "An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain βmax, offset voltage ΔVCE, and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications." @default.
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- W2076366991 date "2006-09-01" @default.
- W2076366991 modified "2023-10-18" @default.
- W2076366991 title "Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation" @default.
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- W2076366991 doi "https://doi.org/10.1016/j.apsusc.2005.09.070" @default.
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