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- W2076385520 abstract "Abstract Epitaxial layers of ZnO on sapphire have been prepared by a vapour phase transport reaction, leading to the following orientations: sapphire (01 1 2) with ZnO (11 2 0) and sapphire (11 2 0) with ZnO (10 1 1). Optical absorption, emission and reflection measurements were performed in the exciton region (3600–3700 A). The measurements show a decreasing influence, with increasing thickness, of the deformation due to the lattice misfit between ZnO and sapphire. The upper region (∼ 1 μm) of the thicker films (d⩾ 30 μm) exhibits properties similar to those of single crystals when examined by emission and reflection techniques. The absorption is influenced by the stressed interface region. The electrical conductivity σ of the layers is 1 Ω-1 cm-1, and the Hall mobility μH approaches 30 cm2V-1 sec-1." @default.
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- W2076385520 date "1975-05-01" @default.
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- W2076385520 title "Characterization of ZnO epitaxial films by their optical properties in the exciton region" @default.
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