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• W2076395102 abstract "Excimer laser annealing of phosphorus-implanted p-type germanium substrate with various laser energy densities for n+/p junction were investigated. The effects of laser energy density on the redistribution of dopant, surface morphology, and recrystallization of the amorphous Ge induced by ion implantation were characterized. A low specific contact resistivity of 1.61×10-6 Ω·cm2 was achieved from Al/n-Ge ohmic contact, in which phosphorus-implanted Ge was annealed at a laser energy density of 250 mJ/cm2, tailoring a small phosphorus diffusion length, high activation level, and low dopant loss. A well-behaved Ge n+/p diode with a rectification ratio up to 1.99×105 was demonstrated." @default.
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• W2076395102 date "2013-10-01" @default.
• W2076395102 modified "2023-10-18" @default.
• W2076395102 title "Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Implantation and Excimer Laser Annealing" @default.
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• W2076395102 doi "https://doi.org/10.7567/apex.6.106501" @default.
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