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- W2076398096 abstract "A broad overview of modern discrete power semiconductor devices is given. The discussion centers around new device designs and modifications of Schottky rectifiers, insulated gate bipolar transistors (IGBTs), MOS-controlled thyristors (MCTs), gate turn-off thyristors (GTOs), and depletion-mode transistors and thyristors. Electrically and optically triggered devices are included in the discussion. Also, there is a brief description of new developments for devices built from advanced semiconductor materials such as GaAs, SiC, and diamond, including high voltage intrinsic switches." @default.
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- W2076398096 date "1993-01-01" @default.
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- W2076398096 title "A review of modern power semiconductor devices" @default.
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- W2076398096 doi "https://doi.org/10.1016/0026-2692(93)90100-s" @default.
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