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- W2076401468 abstract "In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD." @default.
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- W2076401468 date "2012-10-01" @default.
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- W2076401468 title "GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers" @default.
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- W2076401468 doi "https://doi.org/10.1109/lpt.2012.2216517" @default.
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