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- W2076445171 abstract "Abstract In this study, an ion-irradiated single crystal 3C-SiC under fluences of up to 20 dpa at 400–1350 °C was examined using synchrotron based X-ray diffraction and high resolution transmission electron microscopy. Interstitial clusters, dislocation loops, Frank loops, stacking fault loops, and voids in 3C-SiC were investigated. The high resolution TEM results show that clusters collapsed to {1 1 1} small loops when their size reached few nm with increasing temperature, and gradually develop into Frank loops with an added atomic layer along {1 1 1} at 1000 °C. Interplanar spacing information of single crystal SiC was obtained from synchrotron XRD radial scan measurements. Irradiation-induced volume swelling at 400–1350 °C was measured, and the anisotropic (a = b" @default.
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- W2076445171 date "2015-04-01" @default.
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- W2076445171 title "Irradiation-induced microstructural evolution and swelling of 3C-SiC" @default.
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- W2076445171 doi "https://doi.org/10.1016/j.jnucmat.2015.01.040" @default.
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