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- W2076455510 abstract "Tunnel junctions have been formed under high vacuum, by the evaporation of ytterbium on to a GaAs single crystal surface. The ytterbium metal had been purified by evaporation-condensation cycles under vacuum. At normal pressure, the differential resistance of the junctions shows a very strong dependence on bias voltage and temperature. The application of a hydrostatic pressure of 25 kbar destroyed this anomaly. It was then possible to observe the semimetal-semiconductor (SM-SC) transition near 10 kbar and measure the variation of gap parameter with pressure." @default.
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- W2076455510 date "1980-10-01" @default.
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- W2076455510 title "Tunnelling properties of GaAs/Yb junctions under pressure" @default.
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- W2076455510 doi "https://doi.org/10.1088/0305-4608/10/10/022" @default.
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