Matches in SemOpenAlex for { <https://semopenalex.org/work/W2076475221> ?p ?o ?g. }
Showing items 1 to 76 of
76
with 100 items per page.
- W2076475221 endingPage "095017" @default.
- W2076475221 startingPage "095017" @default.
- W2076475221 abstract "We report the results of resistivity, conduction mechanism, dielectric and interface properties of 750 and 1500 A thick Al2O3 films deposited by the e-beam evaporation technique for surface passivation of GaAs-based devices. The typical near-zero bias leakage currents were varying from 85 fA to 6 pA corresponding to a resistivity variation of 3.6 × 1011 to 8.8 × 1011 Ω cm for 750 A films. Similarly for 1500 A films, the corresponding currents were varying from 85 fA to 3 pA indicating a resistivity variation of 1.5 × 1011 to 6.6 × 1012 Ω cm. The 750 A films showed typically almost constant current densities of under 5 × 10−8 A cm−2 compared to varying (1.2–7.5)×10−8 A cm−2 for 1500 A films. These observations were further corroborated by conduction mechanism results. Although the 750 A films showed trends of Frenkel–Poole (FP) conduction for medium electric field strengths with lesser variation, the 1500 A films also showed FP conduction but with more variation and scatter in data. Additionally, we report the results for the estimates of dynamic dielectric constant estimated from the FP conduction dominated region. The average value for 750 A films was 2.17 compared to 4.43 for 1500 A films. The static dielectric constant, interface properties were measured by the capacitance–voltage (CV) technique. The results indicate that a stable interface is possible by using the e-beam evaporation technique contrary to reports available in the literature. The range of values (including the data of both the films) obtained for dielectric constant, fixed charge density and fast interface state density were 3.6–4.6, (0.7–1.4) × 1012 cm−2 and (0.5–1) × 1013 cm−2 eV−1 respectively for these films." @default.
- W2076475221 created "2016-06-24" @default.
- W2076475221 creator A5051011002 @default.
- W2076475221 creator A5058953121 @default.
- W2076475221 creator A5074795863 @default.
- W2076475221 creator A5081415034 @default.
- W2076475221 date "2009-08-12" @default.
- W2076475221 modified "2023-09-23" @default.
- W2076475221 title "Conduction, dielectric and interface properties of Al<sub>2</sub>O<sub>3</sub>films on GaAs deposited by the e-beam evaporation technique" @default.
- W2076475221 cites W1616230297 @default.
- W2076475221 cites W1986331063 @default.
- W2076475221 cites W2003645630 @default.
- W2076475221 cites W2012866062 @default.
- W2076475221 cites W2031882613 @default.
- W2076475221 cites W2038910436 @default.
- W2076475221 cites W2057568606 @default.
- W2076475221 cites W2074998815 @default.
- W2076475221 cites W2105042971 @default.
- W2076475221 cites W2113456792 @default.
- W2076475221 doi "https://doi.org/10.1088/0268-1242/24/9/095017" @default.
- W2076475221 hasPublicationYear "2009" @default.
- W2076475221 type Work @default.
- W2076475221 sameAs 2076475221 @default.
- W2076475221 citedByCount "5" @default.
- W2076475221 countsByYear W20764752212012 @default.
- W2076475221 countsByYear W20764752212015 @default.
- W2076475221 crossrefType "journal-article" @default.
- W2076475221 hasAuthorship W2076475221A5051011002 @default.
- W2076475221 hasAuthorship W2076475221A5058953121 @default.
- W2076475221 hasAuthorship W2076475221A5074795863 @default.
- W2076475221 hasAuthorship W2076475221A5081415034 @default.
- W2076475221 hasConcept C113196181 @default.
- W2076475221 hasConcept C121332964 @default.
- W2076475221 hasConcept C133386390 @default.
- W2076475221 hasConcept C159985019 @default.
- W2076475221 hasConcept C172100665 @default.
- W2076475221 hasConcept C185592680 @default.
- W2076475221 hasConcept C192562407 @default.
- W2076475221 hasConcept C26873012 @default.
- W2076475221 hasConcept C43617362 @default.
- W2076475221 hasConcept C49040817 @default.
- W2076475221 hasConcept C61441594 @default.
- W2076475221 hasConcept C97355855 @default.
- W2076475221 hasConceptScore W2076475221C113196181 @default.
- W2076475221 hasConceptScore W2076475221C121332964 @default.
- W2076475221 hasConceptScore W2076475221C133386390 @default.
- W2076475221 hasConceptScore W2076475221C159985019 @default.
- W2076475221 hasConceptScore W2076475221C172100665 @default.
- W2076475221 hasConceptScore W2076475221C185592680 @default.
- W2076475221 hasConceptScore W2076475221C192562407 @default.
- W2076475221 hasConceptScore W2076475221C26873012 @default.
- W2076475221 hasConceptScore W2076475221C43617362 @default.
- W2076475221 hasConceptScore W2076475221C49040817 @default.
- W2076475221 hasConceptScore W2076475221C61441594 @default.
- W2076475221 hasConceptScore W2076475221C97355855 @default.
- W2076475221 hasIssue "9" @default.
- W2076475221 hasLocation W20764752211 @default.
- W2076475221 hasOpenAccess W2076475221 @default.
- W2076475221 hasPrimaryLocation W20764752211 @default.
- W2076475221 hasRelatedWork W1994753809 @default.
- W2076475221 hasRelatedWork W2043673973 @default.
- W2076475221 hasRelatedWork W2092872563 @default.
- W2076475221 hasRelatedWork W2374646600 @default.
- W2076475221 hasRelatedWork W2804544673 @default.
- W2076475221 hasRelatedWork W2863738027 @default.
- W2076475221 hasRelatedWork W2899084033 @default.
- W2076475221 hasRelatedWork W3037901366 @default.
- W2076475221 hasRelatedWork W3092585306 @default.
- W2076475221 hasRelatedWork W4253731651 @default.
- W2076475221 hasVolume "24" @default.
- W2076475221 isParatext "false" @default.
- W2076475221 isRetracted "false" @default.
- W2076475221 magId "2076475221" @default.
- W2076475221 workType "article" @default.