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- W2076629246 abstract "Optical techniques that use a spectral range of photon energieslarger than the band gap are very sensitive for structuralcharacterization of semiconductor nanocrystals. Techniques thatcan measure the change of polarization during reflection from bulkor thin film samples reveal high sensitivity for both the layerthickness and the refractive index. From one spectroscopicellipsometric measurement performed in a range of 0.7-6.5 eVwithin 1 s using a standard multi-channel ellipsometer not only thethickness and the dielectric function of the film, but a range ofderived material properties like the crystallinity or the size andvolume fraction of nanocrystals can be determined indirectly. Thequality of the measurement is not any more a question ofinstrumentation, but rather a question of interpretation and propermodeling. In this paper we summarize what parameters can bedetermined, and we present a method for the reliable fitting ofnumerous parameters." @default.
- W2076629246 created "2016-06-24" @default.
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- W2076629246 date "2013-05-02" @default.
- W2076629246 modified "2023-09-27" @default.
- W2076629246 title "(Invited) High Sensitivity Optical Characterization of Thin Films with Embedded Si Nanocrystals" @default.
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- W2076629246 doi "https://doi.org/10.1149/05304.0043ecst" @default.
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