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- W2076640651 abstract "Study of donor-type Si/SiO2 interfaces states shows that these centers anneal at room temperature when neutral but are stable when charged positively. Moreover, the anneal process is accompanied by the release of H. We propose that the donor states are related to H attached to interfacial network sites, most likely O atoms, constituting electrically active complexes. When positively charged, H is strongly bonded; when neutral H is only weakly attached. In the latter case it can escape and dimerize so that the states disappear. Similar complexes tying down H in a positively charged state would constitute small cross-section hole traps in the bulk of the oxide." @default.
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- W2076640651 date "1994-11-07" @default.
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- W2076640651 title "Hydrogen induced donor-type Si/SiO2 interface states" @default.
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- W2076640651 doi "https://doi.org/10.1063/1.112696" @default.
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