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• W2076677871 abstract "The Ga(1−x)AlxAs ternary semiconductor alloys have important applications for optoelectronic devices such as lasers and solar cells; hence electrical properties have been investigated extensively. However, little information is available about the behavior of Zn in metalorganic chemical vapor deposition (MO-CVD)Ga(1−x)AlxAs. In this paper the electrical properties of Zn-doped, p-type Ga(1−x)AlxAs films (0⩽x⩽1.0) grown by MO-CVD on GaAs:Cr substrates were studied using Hall measurements over a wide range of temperature (77 to 420 °K). The electrical activation energies were determined by measuring the variation of the carrier concentration of Ga(1−x)AlxAs films with temperature. The results indicate that activation energies increase with increasing Al composition (from 23∼26 meV for x = 0 to 140 meV for x = 1.0). The experimental results have been compared with theoretical data calculated from the modified hydrogenic model, and agreement is excellent for x⩽0.5." @default.
• W2076677871 created "2016-06-24" @default.
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• W2076677871 date "1982-01-01" @default.
• W2076677871 modified "2023-10-16" @default.
• W2076677871 title "Electrical properties of Zn in metalorganic chemical vapor deposition Ga1−<i>x</i>Al<i>x</i>As" @default.
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• W2076677871 doi "https://doi.org/10.1063/1.329987" @default.
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