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- W2076678138 abstract "Abstract Thin films of stannous tungstate have been grown by reactive co-sputtering in an 11% O 2 /Ar atmosphere where a tungsten target is operated in the r.f. mode and a tin target in the d.c. mode. The deposited amorphous films are annealed for 4 h at 400 or 600 °C in order to crystallize the films. XRD together with RBS, EDS and CEMS measurements are used for the characterization of the films. The films sputtered with 150 W power for both modes are found to have crystalline α-SnWO 4 structure after annealing at 400 °C. CEMS results show that tin is in a divalent form (Sn 2+ ) in α-SnWO 4 films. The electrical resistivity together with the gas-response properties to different gases of the α-SnWO 4 films have been measured at different temperatures between room temperature and 400 °C. In the case of response to CO and NO in air, an unusual dual-conductance behaviour is found. For comparison, measurements have also been made with a pure WO 3 film and with some Sn x WO y films having lower tin concentrations ( x" @default.
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- W2076678138 date "1995-04-01" @default.
- W2076678138 modified "2023-10-03" @default.
- W2076678138 title "A study of gas-sensing properties of sputtered α-SnWO4 thin films" @default.
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- W2076678138 doi "https://doi.org/10.1016/0925-4005(95)85129-1" @default.
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