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- W2076756401 abstract "We characterized the room temperature (RT) growth of C 60 on the Si(111) (7 ×7) surface and the SiC formation upon annealing using high resolution photoelectron spectroscopy techniques. Si 2p core level spectra for RT C 60 deposition unambiguously show the strong attenuation of the rest-atoms components and the growth of at least one new component at I ML coverage. This new component grows with annealing temperature and at T > 1020 K an abrupt change occurs, corresponding to the formation of SiC, as confirmed by the C Is core level emission." @default.
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- W2076756401 date "2000-05-01" @default.
- W2076756401 modified "2023-10-14" @default.
- W2076756401 title "High resolution photoemission study of C60 on Si(111) as a precursor of SiC growth" @default.
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- W2076756401 doi "https://doi.org/10.1016/s0039-6028(00)00076-5" @default.
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