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- W2076772227 abstract "Transient characteristics of dark currents have been measured in HgI2 single crystals as functions of voltage and temperature. The existence of a hole trapping center, 0.7 eV deep and of density ∼1015 cm−3, was established, which effectively lowers the hole drift mobility by about seven orders of magnitude. The samples were found to be slightly extrinsic n type, the Fermi level being 0.9 eV deep. The room-temperature electron density was about 2×103 cm−3. The meaning of these characteristics to the performances of HgI2 γ- and x-ray spectrometers is discussed. Particularly, it is suggested that lowering of the HgI2 detector operation temperature to about 0 °C will improve its energy resolution capabilities." @default.
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- W2076772227 date "1985-03-15" @default.
- W2076772227 modified "2023-10-16" @default.
- W2076772227 title "Dark current transients in HgI2 single crystals used as γ- and x-ray spectrometers" @default.
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- W2076772227 doi "https://doi.org/10.1063/1.334429" @default.
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