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• W2076782765 abstract "Transport properties are investigated in self-aligned NMOS devices with gate lengths down to 0.07 mu m. Velocity overshoot was observed in the form of the highest transconductances measured to date in Si FETs, as well as in the trend of the transconductance with gate length. The measured transconductance reached 910 mu S/ mu m at liquid-nitrogen temperature and 590 mu S/ mu m at room temperature. Velocity overshoot, by making such transconductances possible, should extend the value of miniaturization to dimensions that are smaller than what was commonly assumed to be worthwhile to pursue.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2076782765 date "1988-09-01" @default.
• W2076782765 modified "2023-09-23" @default.
• W2076782765 title "High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level" @default.
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• W2076782765 doi "https://doi.org/10.1109/55.6946" @default.
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