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• W2076793977 abstract "High-quality diamond epitaxial films were obtained on Ib diamond (100) substrates by means of the microwave plasma-assisted chemical-vapor-deposition (CVD) method. For the source gas, CH 4 and H 2 gases were used in different CH 4 concentrations (CH 4 /H 2 ), from 1 vol% to 8 vol%. At CH 4 /H 2 =6%, the surfaces of the films were smooth and streaks were observed by reflection high-energy electron diffraction (RHEED). Raman spectra showed that they had no graphitic components. In contrast, Raman spectra showed that both the (110) epitaxial films and the polycrystalline films grown at CH 4 =6% had graphitic components." @default.
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• W2076793977 date "1990-01-01" @default.
• W2076793977 modified "2023-09-26" @default.
• W2076793977 title "Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method" @default.
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• W2076793977 doi "https://doi.org/10.1143/jjap.29.34" @default.
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