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- W2076869008 abstract "We have successfully demonstrated the novel HSQ based T-gate process to transfer the negative nanoscale patterns to positive patterns. This process is based on electron beam (EB) lithography, O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma and BOE solution etching. Because O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma etching has the high selectivity between HSQ and ZEP, HSQ patterns were exposed over the ZEP layer without any loss of pattern dimension. HSQ was then selectively etched by BOE solution. Therefore it is very simple and reproducible process in achieving nanoscale pattern of positive tone and could be useful for the fabrication of nanoscale T-gate HEMTs. The fabricated 40 nm In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.7</sub> GaAs HEMTs with the novel HSQ based T-gate process exhibit an extrinsic transconductance gm of 1.4 S/mm and a cut-off frequency f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> of 370 GHz" @default.
- W2076869008 created "2016-06-24" @default.
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- W2076869008 date "2006-09-01" @default.
- W2076869008 modified "2023-09-24" @default.
- W2076869008 title "40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process" @default.
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- W2076869008 doi "https://doi.org/10.1109/emicc.2006.282673" @default.
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