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- W2076885854 abstract "The microcrystallinity of hydrogenated amorphous silicon films deposited by the conventional radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on chamber pressure are discussed. In a wide range of pressure at which the microcrystalline film can be formed, a critical pressure (500 mT) is found. Films deposited at this critical pressure possess the highest crystalline volume fraction and the smallest grain size. An ion-bombardment-assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin-film transistors (TFTs), the subthreshold swing and the field effect mobility are studied, both of which are found to be smaller than those of the hydrogenated amorphous silicon (a-Si:H) TFTs." @default.
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- W2076885854 title "Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors" @default.
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- W2076885854 doi "https://doi.org/10.1143/jjap.34.5943" @default.
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