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- W2077008051 abstract "The electrical resistivity of r.f. sputtered molybdenum films of thickness 5–150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films." @default.
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- W2077008051 date "1980-04-01" @default.
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- W2077008051 title "Electrical resistivity of sputtered molybdenum films" @default.
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- W2077008051 doi "https://doi.org/10.1016/0040-6090(80)90279-5" @default.
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