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• W2077037298 abstract "P-type hydrogenated nanocrystalline cubic silicon carbide (p-nc-3C-SiC:H) is a promising material for the window layer due to its wider bandgap of 2.2 eV and lower light absorption than conventional p-a-Si:H to reduce light absorption loss in the range of 400-600 nm. However, since large amount of atomic hydrogen is generated under the deposition condition of p-nc-3C-SiC:H by VHF-PECVD, it gives damage to the surface of the n-c-Si by etching. In this study, we investigated the effects of deposition conditions of p-nc-3C-SiC:H on the properties of n-type c-Si heterojunction solar cells with the structure of Al/Ag/ITO/p-nc-3C-SiC:H/a-Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :H/n-c-Si/n-a-Si:H/Al. It was found that it is needed to keep higher deposition rate to avoid etching of an a-Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :H buffer layer, which is a passivation layer and protective layer against atomic hydrogen etching of the crystalline silicon surface. At high deposition pressure of 800 Pa, we successfully deposited p-nc-3C-SiC:H films at higher deposition rate without the degradation of the electrical property. Under the optimized conditions, high efficiency of 17.0 % (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>oc</sub> = 0.638 V, J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sc</sub> = 35.95 mA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , Fill factor = 0.742) was achieved without any anti-reflection layers and textures." @default.
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• W2077037298 date "2011-06-01" @default.
• W2077037298 modified "2023-09-26" @default.
• W2077037298 title "Effects of the deposition conditions of p-type hydrogenated nanocrystalline cubic silicon carbide on n-type crystalline silicon heterojunction solar cell performance" @default.
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• W2077037298 doi "https://doi.org/10.1109/pvsc.2011.6186226" @default.
• W2077037298 hasPublicationYear "2011" @default.
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