Matches in SemOpenAlex for { <https://semopenalex.org/work/W2077103521> ?p ?o ?g. }
- W2077103521 endingPage "R702" @default.
- W2077103521 startingPage "R657" @default.
- W2077103521 abstract "The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O, and grown-in defects, such as vacancy and antisite point defects, are also discussed. The doping process during epitaxial growth of GaN, AlGaN, InGaN, and their superlattice structures is described. Doping using the diffusion process and ion implantation techniques is also discussed. A p-n junction formed by Si implantation into p-type GaN is successfully fabricated. The results on crystal structure, electrical resistivity, carrier mobility, and optical spectra obtained by means of x-rays, low-temperature Hall measurements, and photoluminescence are also discussed." @default.
- W2077103521 created "2016-06-24" @default.
- W2077103521 creator A5056377095 @default.
- W2077103521 creator A5087277261 @default.
- W2077103521 date "2002-05-24" @default.
- W2077103521 modified "2023-10-12" @default.
- W2077103521 title "The doping process and dopant characteristics of GaN" @default.
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