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• W2077135088 abstract "Generation-recombination (GR) noise in GaN and AlGaN thin films, GaN based Metal Semiconductor Field Effect Transistors (MESFETs), Heterostructure Field Effect Transistors (HFETs) and Schottky diode photodetectors was investigated. AlGaN thin films, AlGaN/GaN HFETs and Schottky barrier Al_0.4Ga_0.6N diodes exhibited GR noise with activation energies of 0.8 - 1 eV. AlGaN/GaN HFETs also presented GR noise with activation energies of 1 - 3 meV and 0.24 eV at cryogenic temperatures. No such noise was observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistors (DHFETs). We conclude that the local levels responsible for the observed noise in HFETs and DHFETs could be located in AlGaN barrier layers." @default.
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• W2077135088 date "2003-05-12" @default.
• W2077135088 modified "2023-10-18" @default.
• W2077135088 title "Generation-recombination noise in GaN and GaN-based devices" @default.
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• W2077135088 doi "https://doi.org/10.1117/12.488468" @default.
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